Title :
A design of multi-GHz continuous-time bandpass filters using 0.1-μm HEMT technology
Author :
Nakamura, Shunsuke ; Ohmae, Uichiro ; Watanabe, Hiroshi ; Waho, Takao
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
Abstract :
A multi-GHz continuous-time bandpass filter based on 0.1-mum InP-based high-electron mobility transistor (HEMT) technology is designed. Since p-channel devices are not commonly used in HEMT technology, bootstrap current sources consisting of n-channel depletion-type HEMTs are used in the Gm-C circuit to obtain high-frequency high-gain operation. By transistor- level simulations, center frequencies of more than 10 GHz are predicted.
Keywords :
HEMT circuits; band-pass filters; continuous time filters; network synthesis; Gm-C circuit; HEMT technology; high-electron mobility transistor technology; multi-GHz continuous-time bandpass filters; size 0.1 mum; Band pass filters; CMOS technology; Circuit simulation; Equations; Frequency; HEMTs; Impedance; MOSFETs; Negative feedback; Transfer functions;
Conference_Titel :
Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4244-1341-6
Electronic_ISBN :
978-1-4244-1342-3
DOI :
10.1109/ECCTD.2007.4529638
