Title :
Resilient design in scaled CMOS for energy efficiency
Author :
Tschanz, James ; Bowman, Keith ; Khellah, Muhammad ; Wilkerson, Chris ; Geuskens, Bibiche ; Somasekhar, Dinesh ; Raychowdhury, Arijit ; Kulkarni, Jaydeep ; Tokunaga, Carlos ; Lu, Shih-Lien ; Karnik, Tanay ; De, Vivek
Author_Institution :
Circuits Res. Lab., Intel Labs., Hillsboro, OR, USA
Abstract :
Traditional processors are designed to guarantee error-free operation under worst-case device & interconnect parameter variations resulting from less than ideal manufacturing process control; static & erratic defects; operating environments such as temperature excursions and voltage droops; critical path activation and path delay degradations due to multiple inputs switching simultaneously in gates containing transistor stacks, or signal coupling from neighboring lines in interconnect paths; speed degradation over the operating lifetime due to transistor aging under voltage, temperature & current stress; early-life failures due to latent defect accelerations; and soft error due to cosmic rays and alpha particle impacts. The voltage-frequency settings for all processors are set based on these infrequently encountered worst-case considerations, even though under typical conditions voltage can be pushed down further or frequency increased without causing errors for most of the processors, thus limiting both energy efficiency and performance in scaled CMOS technologies.
Keywords :
CMOS integrated circuits; integrated circuit design; integrated circuit reliability; low-power electronics; early life failures; energy efficiency; erratic defects; latent defect acceleration; parameter variations; resilient design; scaled CMOS technology; soft error; static defects; CMOS technology; Degradation; Energy efficiency; Error-free operation; Manufacturing processes; Process design; Signal design; Stress control; Temperature control; Voltage;
Conference_Titel :
Design Automation Conference (ASP-DAC), 2010 15th Asia and South Pacific
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-5765-6
Electronic_ISBN :
978-1-4244-5767-0
DOI :
10.1109/ASPDAC.2010.5419812