Title :
Dynamic power estimation for deep submicron circuits with process variation
Author :
Dinh, Quang ; Chen, Deming ; Wong, Martin D F
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
Dynamic power consumption in CMOS circuits is usually estimated based on the number of signal transitions. However, when considering glitches, this is not accurate because narrow glitches consume less power than wide glitches. Glitch width and transition density modeling is further complicated by the effect of process variation. This paper presents a fast and accurate dynamic power estimation method that considers the detailed effect of process variation. First, we extend the probabilistic modeling approach to handle timing variations. Then the power consumption of a logic gate is computed based on the transition waveforms of its inputs. Both mean values and standard deviations of the dynamic power are estimated with high confidence based on accurate device characterization data. Compared with SPICE-based Monte Carlo simulations for small circuits, our power estimator reports power results within 3% error for the mean and 5% error for the standard deviation with six orders of magnitude speedup. For medium and large benchmarks, it is impossible to run Monte Carlo simulations with enough samples due to very long runtime, while our estimator can finish within minutes.
Keywords :
CMOS logic circuits; Monte Carlo methods; integrated circuit modelling; logic gates; logic simulation; CMOS circuits; SPICE-based Monte Carlo simulations; deep submicron circuits; dynamic power estimation; glitch width; logic gates; probabilistic modeling; process variation; signal transitions; timing variation; transition density modeling; CMOS process; Circuits; Clocks; Delay; Energy consumption; Logic devices; Logic gates; Semiconductor device modeling; Signal processing; Timing;
Conference_Titel :
Design Automation Conference (ASP-DAC), 2010 15th Asia and South Pacific
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-5765-6
Electronic_ISBN :
978-1-4244-5767-0
DOI :
10.1109/ASPDAC.2010.5419818