Title :
Highly reliable guardring-free InAlAs avalanche photodiodes
Author :
Ishimura, E. ; Yagyu, E. ; Nakaji, M. ; Ihara, S. ; Itamoto, H. ; Yoshiara, K. ; Aoyagi, T. ; Ishikawa, T.
Author_Institution :
High Freq. & Opt. Device Works, Mitsubishi Electr. Corp.
Abstract :
The InAlAs avalanche photodiodes that employ a guardring-free structure demonstrate record high reliability of over 10000 hours at a high temperature of 200degC with no degradation in the surfaced pn-junction.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical receivers; p-n heterojunctions; semiconductor device reliability; InAlAs; avalanche photodiodes; guardring-free structure; high-sensitivity receivers; reliability; surfaced pn-junction; temperature 200 C; Avalanche photodiodes; Dark current; Degradation; Distributed Bragg reflectors; Frequency; Indium compounds; Indium gallium arsenide; Indium phosphide; Temperature; Testing;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688535
