Title :
A 2.4 GHz SiGe bipolar power amplifier with integrated diode linearizer for WLAN IEEE 802.11b/g applications
Author :
Kim, J.H. ; Kim, K.Y. ; Park, Y.H. ; Chung, Y.K. ; Park, C.S.
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Daejeon
Abstract :
A linear RF power amplifier with integrated reverse biased diode linearizer for IEEE 802.11b/g WLAN terminals is implemented with a 33 GHz-fT, 0.5-mum-SiGe bipolar technology. The proposed linearizer maintains the fixed base voltage of power stage HBTs. The power amplifier exhibits 24.5 dBm of 1-dB compression point (P1dB), with 36% of the power-added efficiency (PAE), and 17 dB of the power gain under 3.3 V power supply. The third-order IMD value is less than - 32.5 dBc at 3 dB back-off from P1dB for the frequency of 2.45 GHz. The fabricated chip size is as small as 1times0.7 mm2, including input/inter-stage matching network and all active bias circuits
Keywords :
UHF bipolar transistors; UHF diodes; UHF power amplifiers; germanium; heterojunction bipolar transistors; intermodulation distortion; linearisation techniques; millimetre wave diodes; millimetre wave power amplifiers; semiconductor materials; silicon; wireless LAN; 0.5 mum; 17 dB; 2.4 GHz; 3.3 V; 33 GHz; 36 percent; HBT; SiGe; WLAN IEEE 802.11; active bias circuits; bipolar power amplifier; integrated diode linearizer; inter-stage matching network; intermodulation distortion; linear RF power amplifier; Diodes; Germanium silicon alloys; Impedance matching; Power amplifiers; Power supplies; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Voltage; Wireless LAN;
Conference_Titel :
Radio and Wireless Symposium, 2006 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9412-7
DOI :
10.1109/RWS.2006.1615146
