Title :
A discussion on exponential-gain charge pump
Author :
Gobbi, L. ; Cabrini, A. ; Torelli, G.
Author_Institution :
Dept. of Electron., Univ. of Pavia, Pavia
Abstract :
This paper presents a discussion about the performance achievable by an exponential-gain charge pump (i.e., by a charge pump featuring a voltage gain which increases exponentially with the number of stages). This charge pump topology is analyzed in terms of both voltage gain and equivalent output resistance. An analytical expression of these two parameters is provided, which allows performance comparison with other charge pump topologies. The expression of the output voltage rise time is also derived.
Keywords :
VLSI; network topology; charge pump topology; equivalent output resistance; exponential-gain charge pump; Capacitors; Charge pumps; Charge transfer; Circuit topology; Elevators; Nonvolatile memory; Performance analysis; Performance gain; Silicon; Voltage;
Conference_Titel :
Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4244-1341-6
Electronic_ISBN :
978-1-4244-1342-3
DOI :
10.1109/ECCTD.2007.4529671
