Title :
InP-based single photon avalanche diodes
Author :
Itzler, Mark A. ; Jiang, Xudong ; Nyman, Bruce ; Ben-Michael, Rafael ; Slomkowski, Krystyna
Author_Institution :
Princeton Lightwave Inc., Princeton, NJ
Abstract :
We describe recent results for the performance and modeling of InP-based single photon avalanche diodes. At 1.55 mum, dark count probabilities < 2 times 10-7 ns-1 have been achieved at 220 K for a photon detection efficiency of 15%.
Keywords :
III-V semiconductors; avalanche photodiodes; indium compounds; InP; dark count probabilities; photon detection efficiency; single photon avalanche diodes; temperature 220 K; wavelength 1.55 mum; Absorption; Circuits; Costs; Cryptography; Diodes; Indium phosphide; Infrared detectors; Optical fibers; Photonics; Temperature;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688571
