Title :
Analysis of wide tuning range CMOS VCO with active inductors
Author :
Filanovsky, I.M. ; Reja, Md Mahbub ; Verhoeven, C.J.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada
Abstract :
Operation of a wide tuning range CMOS voltage-controlled oscillator (VCO) utilizing active inductors is described. The oscillator is based on LC cross-coupled topology with tunable active inductors replacing the passive ones. The operation embraces sinusoidal, transitional, and relaxation regimes. The wide tuning frequency range is achieved by this continuous change of operation regime. The qualitative description is given using the pole placement root locus. The quantitative calculations of amplitude and frequency are done using the van der Pol model. The oscillator was designed and simulated in 90 nm CMOS process. The operation was confirmed for output frequency ranging from 500 MHz to 10.3 GHz.
Keywords :
CMOS integrated circuits; inductors; voltage-controlled oscillators; CMOS process; LC cross-coupled topology; pole placement root locus; tunable active inductor; van der Pol model; voltage-controlled oscillator; wide tuning frequency range; wide tuning range CMOS VCO; Active inductors; CMOS process; Circuit simulation; Differential equations; Frequency; Laboratories; Semiconductor device modeling; State feedback; Tuning; Voltage-controlled oscillators; Nonlinear circuits; nonlinear oscillations; quasisinusoidal oscillations; relaxation oscillations; van der Pol oscillator;
Conference_Titel :
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-7771-5
DOI :
10.1109/MWSCAS.2010.5548569
