DocumentCode :
1569505
Title :
Modelling the single-electron transistor with piecewise linear functions
Author :
Sarmiento-Reyes, Arturo ; Hernández-Martínez, Luis ; Anda, M. ; González, Francisco Javier Castro
Author_Institution :
Electron. Dept., INAOE, Puebla, Mexico
fYear :
2009
Firstpage :
241
Lastpage :
244
Abstract :
Hybrid systems built up with CMOS devices and Single-Electron Transistors (SET), have been foreseen as a potential alternative in the long term when CMOS downscaling reaches its physical fundamental limits. Although there are still many problems in the fabrication of these nanoelectronic devices, the design flow for hybrid systems requires further development not only in those aspects directly linked to the design and synthesis, but also in aspects regarding the verification of the design, such as electrical simulation. This paper introduces an appropriate model for the SET that can be easily implemented for co-simulation of hybrid systems. The model constitutes a functional model for the SET in the form of an explicit piecewise linear (PWL) formulation that can be easily coded into a high level language.
Keywords :
nanoelectronics; piecewise linear techniques; semiconductor device models; single electron transistors; high level language; hybrid systems co-simulation; nanoelectronic devices; piecewise linear function; single-electron transistor; transistor modelling; CMOS technology; Circuit simulation; Fabrication; High level languages; Microelectronics; Nanoscale devices; Piecewise linear approximation; Piecewise linear techniques; Semiconductor device modeling; Single electron transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuit Theory and Design, 2009. ECCTD 2009. European Conference on
Conference_Location :
Antalya
Print_ISBN :
978-1-4244-3896-9
Electronic_ISBN :
978-1-4244-3896-9
Type :
conf
DOI :
10.1109/ECCTD.2009.5274932
Filename :
5274932
Link To Document :
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