DocumentCode :
1569545
Title :
Monte Carlo study of the temperature dependent performance of GaN versus GaAs terahertz quantum cascade structures
Author :
Bellotti, Enrico ; Driscoll, Kristina ; Moustakas, Theodore D. ; Paiella, Roberto
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA
fYear :
2008
Firstpage :
266
Lastpage :
267
Abstract :
We present a Monte Carlo study of the carrier dynamics in terahertz quantum cascade lasers to quantify the potential of GaN/AlGaN over GaAs/AlGaAs quantum wells for high temperature operation.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; gallium compounds; microwave photonics; quantum cascade lasers; terahertz wave devices; GaAs-AlGaAs; GaN-AlGaN; Monte Carlo method; carrier dynamics; high temperature operation; quantum wells; terahertz quantum cascade lasers; Aluminum gallium nitride; Frequency; Gallium arsenide; Gallium nitride; Monte Carlo methods; Optical scattering; Quantum cascade lasers; Quantum computing; Semiconductor lasers; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
Type :
conf
DOI :
10.1109/LEOS.2008.4688592
Filename :
4688592
Link To Document :
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