Title :
A low voltage SiGe HBT up-conversion mixer for 5.8 GHz WLAN
Author :
Myoung, No Gil ; Choi, Byoung Gun ; Park, Chul Soon
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Daejeon, South Korea
Abstract :
A new low voltage doubly balanced mixer topology for 5.8 GHz wireless local area network applications is presented in this paper. To reduce the supply voltage, a single stacked transistor mixer topology is designed with 50 GHz fT SiGe HBT process. The designed up-conversion mixer has a conversion gain of 4.2 dB, an OP1 dB of -6 dBm and LO to RF isolation greater than 31 dB while consuming DC power of 13.2 mW under a 1.2 V low supply voltage. The chip size including pads is 0.96 mm × 0.92 mm.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave mixers; wireless LAN; 1.2 V; 13.2 mW; 4.2 dB; 5.8 GHz; 50 GHz; HBT; RF isolation; WLAN; low voltage doubly balanced mixer topology; single stacked transistor mixer topology; up-conversion mixer; wireless local area network; Baseband; Circuit topology; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Low voltage; RF signals; Radio frequency; Silicon germanium; Wireless LAN;
Conference_Titel :
Radio and Wireless Symposium, 2006 IEEE
Print_ISBN :
0-7803-9412-7
DOI :
10.1109/RWS.2006.1615188
