Title :
A high-speed current mode sense amplifier for Spin-Torque Transfer Magnetic Random Access Memory
Author :
Cheng, Chia-Tsung ; Tsai, Yu-Chang ; Cheng, Kuo-Hsing
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
A high-speed current mode sense amplifier for Spin Torque Transfer Magnetic Random Access Memory (STT MRAM) is proposed. The sense amplifier is designed in a 0.18 μm CMOS technology, and 1.8 V supply voltage. The resistance values of high state is 2132 Ω, low state is 1215 Ω, and reference state is 1512 Ω, respectively. The proposed sense amplifier decreases the dropping rate of input bias. In particular, it can reduce the sensing time and the power-delay-product (PDP). In addition, the proposed sense amplifier has higher driving ability.
Keywords :
CMOS integrated circuits; MRAM devices; amplifiers; CMOS technology; STT MRAM; high-speed current mode sense amplifier; power-delay-product; resistance 1215 ohm; resistance 1512 ohm; resistance 2132 ohm; size 0.18 micron; spin-torque transfer magnetic random access memory; voltage 1.8 V; CMOS technology; Delay effects; Electric resistance; Equivalent circuits; Impedance; Random access memory; Resistors; Torque; Voltage; Writing;
Conference_Titel :
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-7771-5
DOI :
10.1109/MWSCAS.2010.5548588
