DocumentCode
1569735
Title
Backside-illuminated high-current photodiode for analog optical links
Author
Sakai, Kiyohide ; Nagatsuka, Tsutomu ; Itakura, Shigetaka ; Otsuka, Hiroshi ; Hirano, Yoshihito
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Sagamihara
fYear
2008
Firstpage
288
Lastpage
289
Abstract
We fabricated a backside-illuminated high-current InGaAs/InP photodiode, and demonstrated an RF power of 25.8 dBm at 5 GHz. The third-order intercept point was 34.2 dBm at the photocurrent of 100 mA, 5.2 GHz.
Keywords
microwave photonics; optical communication equipment; photodiodes; radio-over-fibre; InGaAs-InP; analog optical links; backside-illuminated photodiode; current 100 mA; frequency 5 GHz; frequency 5.2 GHz; high-current photodiode; photocurrent; radio-over-fiber links; third-order intercept point; Absorption; Indium gallium arsenide; Indium phosphide; Optical attenuators; Optical distortion; Optical fiber communication; Optical modulation; Photoconductivity; Photodiodes; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688603
Filename
4688603
Link To Document