DocumentCode :
1569737
Title :
Emerging non-volatile memory technologies: From materials, to device, circuit, and architecture
Author :
Hai Li ; Yiran Chen
Author_Institution :
Dept. of Electr. & Comput. Eng., Polytech. Inst. of NYU, Brooklyn, NY, USA
fYear :
2010
Firstpage :
1
Lastpage :
4
Abstract :
The emerging nonvolatile memory technologies are gaining significant attentions from semiconductor in recent years. Multiple promising candidates, such as phase change memory, magnetic memory, resistive memory, and memristor, have gained substantial attentions and are being actively pursued by industry. In this paper, we will give a 360 degree introduction on emerging non-volatile memory technologies by using spin-transfer torque random access memory (STT-RAM) as an example. The discussion includes process technology, device modeling, design considerations, and architecture in future computing systems.
Keywords :
magnetic storage; memristors; phase change memories; semiconductor device models; STT-RAM; design considerations; device modeling; magnetic memory; memristor; nonvolatile memory technology; phase change memory; process technology; resistive memory; spin-transfer torque random access memory; Circuits; Magnetic materials; Magnetic memory; Memristors; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Semiconductor materials; Torque;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location :
Seattle, WA
ISSN :
1548-3746
Print_ISBN :
978-1-4244-7771-5
Type :
conf
DOI :
10.1109/MWSCAS.2010.5548590
Filename :
5548590
Link To Document :
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