Title :
InAs electron avalanche photodiodes with single carrier type multiplication and extremely low excess noise
Author :
Marshall, A.R.J. ; Tan, C.H. ; Steer, M.J. ; David, J.P.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield
Abstract :
This paper reports a comprehensive study of impact ionization in InAs avalanche photodiodes (APDs), indicating for the first time that InAs may offer a III-V alternative to the CdHgTe electron APD (EAPD).
Keywords :
III-V semiconductors; avalanche breakdown; avalanche photodiodes; charge injection; impact ionisation; indium compounds; p-i-n photodiodes; semiconductor device noise; InAs; electron avalanche photodiodes; extremely low excess noise; impact ionization; n-i-p diodes; p-i-n diodes; photomultiplication measurements; pure electron injection; single carrier type multiplication; Avalanche photodiodes; Charge carrier processes; Electrons; III-V semiconductor materials; Impact ionization; Noise measurement; P-i-n diodes; PIN photodiodes; Photoconductivity; Wavelength measurement;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688607
