Title :
Hole initiated mid wave infrared InAs/GaSb strained layer superlattice avalanche photodiode
Author :
Banerjee, Koushik ; Mallick, Shubhrangshu ; Ghosh, Siddhartha ; Plis, Elena ; Krishna, Sanjay ; Grein, Christoph
Author_Institution :
Lab. for Photonics & Magnetics (ECE Dept), Univ. of Illinois, Chicago, IL
Abstract :
This work focuses on the performance of a MWIR hole dominated APD. The superlattice (InAs/GaAs/GaInSb/AlSb/GaAs) was specifically designed to have hole dominated avalanching.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium compounds; indium compounds; infrared detectors; photodetectors; semiconductor superlattices; InAs-GaSb; diode characteristics; hole dominated avalanching; hole initiated mid wave infrared APD; multiplication gain; reverse bias; single carrier initiated ionization; strained layer superlattice avalanche photodiode; temperature 77 K; temperature dependent variation; voltage 3.6 V; Avalanche photodiodes; Diodes; Gain measurement; Infrared detectors; Laser sintering; Lighting; Magnetic materials; Optical receivers; Superlattices; Voltage;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688608
