DocumentCode
1569812
Title
Hole initiated mid wave infrared InAs/GaSb strained layer superlattice avalanche photodiode
Author
Banerjee, Koushik ; Mallick, Shubhrangshu ; Ghosh, Siddhartha ; Plis, Elena ; Krishna, Sanjay ; Grein, Christoph
Author_Institution
Lab. for Photonics & Magnetics (ECE Dept), Univ. of Illinois, Chicago, IL
fYear
2008
Firstpage
298
Lastpage
299
Abstract
This work focuses on the performance of a MWIR hole dominated APD. The superlattice (InAs/GaAs/GaInSb/AlSb/GaAs) was specifically designed to have hole dominated avalanching.
Keywords
III-V semiconductors; avalanche photodiodes; gallium compounds; indium compounds; infrared detectors; photodetectors; semiconductor superlattices; InAs-GaSb; diode characteristics; hole dominated avalanching; hole initiated mid wave infrared APD; multiplication gain; reverse bias; single carrier initiated ionization; strained layer superlattice avalanche photodiode; temperature 77 K; temperature dependent variation; voltage 3.6 V; Avalanche photodiodes; Diodes; Gain measurement; Infrared detectors; Laser sintering; Lighting; Magnetic materials; Optical receivers; Superlattices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688608
Filename
4688608
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