Indium phosphide based membrane photodetector for optical interconnects on silicon

Author

Binetti, P.R.A. ; Leijtens, X.J.M. ; de Vries, T. ; Oei, Y.S. ; Raz, O. ; Di Cioccio, L. ; Fedeli, J. -M ; Lagahe, C. ; Orobtchouk, R. ; Van Campenhout, J. ; Van Thourhout, D. ; van Veldhoven, P.J. ; Nötzel, R. ; Smit, M.K.

Author_Institution

COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven

fYear

2008

Firstpage

302

Lastpage

303

Abstract

We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

Keywords

III-V semiconductors; elemental semiconductors; indium compounds; integrated optoelectronics; membranes; optical design techniques; optical fabrication; optical interconnections; photodetectors; silicon; silicon-on-insulator; InP-Si; RF characterization; SOI wafer; Si; detector fabrication process; electronic IC processing; indium phosphide; membrane photodetector design; silicon-wiring photonic circuit; wafer scale processing; Biomembranes; Detectors; Indium phosphide; Integrated circuit interconnections; Optical device fabrication; Optical interconnections; Optical waveguides; Photodetectors; Photonic integrated circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the

Conference_Location

Acapulco

Print_ISBN

978-1-4244-1931-9

Electronic_ISBN

978-1-4244-1932-6

Type

conf

DOI

10.1109/LEOS.2008.4688610

Filename

4688610