Title :
Epitaxially-induced perpendicular anisotropy in manganite films
Author :
Ranno, L. ; Favre-Nicolin, E. ; Tiron, R.
Author_Institution :
Lab. Louis Neel, CNRS, Grenoble, France
Abstract :
Summary form only given. La/sub 0.7/Sr/sub 0.3/MnO/sub 3/ is a good model system to study several fundamental aspects of spin transport. It is claimed to be fully polarised at E/sub F/ and the absence of an s-character band gives 100% 3d-symmetry electrons. As it is a member of the perovskite family, it is possible to grow epitaxial heterostructures based on manganites and insulating perovskite layers such as SrTiO/sub 3/ to form tunnel junctions. Though the main characteristics of spin-tunnelling are known, the details of the effect is not yet clear. The role of the barrier, which can hybridise with the electrodes, the role of the carrier symmetry (s or d) and the voltage and temperature dependence of the tunnel magnetoresistance are to be understood. In particular, the rapid disappearance of the spin tunnelling effect in manganite junctions is not understood. Here we focus on one aspect of manganite heterostructures, which is the role of epitaxial strain on the electrode magnetism.
Keywords :
ferromagnetic materials; induced anisotropy (magnetic); internal stresses; lanthanum compounds; magnetic epitaxial layers; perpendicular magnetic anisotropy; strontium compounds; 3d-symmetry electrons; La/sub 0.7/Sr/sub 0.3/MnO/sub 3/; epitaxial strain; epitaxially-induced perpendicular anisotropy; manganite films; manganite heterostructures; spin transport; spin-tunnelling; tunnel junctions; Anisotropic magnetoresistance; Electrodes; Electrons; Insulation; Polarization; Semiconductor process modeling; Strontium; Temperature dependence; Tunneling magnetoresistance; Voltage;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001145