Title :
A CMOS Readout Circuit for Silicon Resonant Accelerometer with 32-ppb bias stability
Author :
He, Lin ; Xu, Yong Ping ; Palaniapan, Moorthi
Author_Institution :
Nat. Univ. of Singapore, Singapore
Abstract :
This paper describes a fully-differential CMOS readout circuit for silicon micro-resonant accelerometer. Tested with a SOI resonator, the readout chip sustains the oscillation at 110 kHz with a phase noise of -36 dBc@1 Hz and a bias stability of 0.0035 Hz or 32 ppb, which can be translated to an amplitude noise of 1 Aring/radicHz down to 0.05 Hz and stability of 0.22 Aring up to 100 seconds. The chip is fabricated in a 0.35-mum CMOS process and draws 5 mA under a 3.3-V single supply.
Keywords :
CMOS integrated circuits; accelerometers; elemental semiconductors; micromechanical resonators; phase noise; readout electronics; silicon; silicon-on-insulator; MEMS resonator; SOI resonator; amplitude noise; bias stability; current 5 mA; frequency 0.0035 Hz; frequency 110 kHz; fully-differential CMOS readout circuit; phase noise; readout chip; silicon microresonant accelerometer; size 0.35 mum; voltage 3.3 V; Accelerometers; CMOS process; Circuit noise; Circuit stability; Circuit testing; Noise level; Phase noise; RLC circuits; Resonance; Silicon; CMOS readout circuit; MEMS resonator; bias stability;
Conference_Titel :
VLSI Circuits, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-05-5
Electronic_ISBN :
978-4-900784-05-5
DOI :
10.1109/VLSIC.2007.4342692
