Title :
Ultra-scaled high-frequency single-crystal Si NEMS resonators and their front-end co-integration with CMOS for high sensitivity applications
Author :
Ollier, E. ; Dupré, C. ; Arndt, G. ; Arcamone, J. ; Vizioz, C. ; Duraffourg, L. ; Sage, E. ; Koumela, A. ; Hentz, S. ; Cibrario, G. ; Meininger, P. ; Benotmane, K. ; Marcoux, C. ; Rozeau, O. ; Billiot, G. ; Colinet, E. ; Andrieu, F. ; Philippe, J. ; Ausse
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
This paper reports on ultra-scaled single-crystal Si NEMS resonators (25-40 nm thick) operating in the 10-100 MHz frequency range. Their first monolithic integration at the front-end level with CMOS enables to extract the signal from background leading to possible implementation of direct/homodyne measurement, for high sensitivity sensing applications and portable systems.
Keywords :
CMOS integrated circuits; micromechanical resonators; nanoelectromechanical devices; CMOS; front-end co-integration; front-end level; high sensitivity sensing application; monolithic integration; portable system; ultra-scaled high-frequency single-crystal silicon NEMS resonators; CMOS integrated circuits; CMOS technology; Etching; Logic gates; Nanoelectromechanical systems; Piezoresistance; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170421
