Radial bulk-mode vibrations in a gate-all-around silicon nanowire transistor

Author

Ziaei-Moayyed, M. ; Resnick, P. ; Draper, B. ; Okandan, M.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2012

Firstpage

1340

Lastpage

1343

Abstract

This paper reports the radial bulk-mode vibrations in a gate-all-around (GAA) silicon nanowire (SiNW) transistor at 25.3GHz, with a quality factor of ~850 measured in air. The radial bulk-mode resonance is excited capacitively in the SiNW using the surrounding gate and gate dielectric as the transducer; the output is sensed piezoresistively by modulating the drain current in SiNW. The SiNWs are defined using standard lithography in a top-down front-end CMOS process, which allows for resonators with different frequencies to be fabricated on the same chip.

Keywords

MOSFET; Q-factor; elemental semiconductors; lithography; microwave field effect transistors; microwave resonators; nanowires; piezoresistive devices; semiconductor quantum wires; silicon; transducers; GAA silicon nanowire transistor; Si; drain current modulation; frequency 25.3 GHz; gate dielectric; gate-all-around silicon nanowire transistor; lithography; piezoresistive sensing; quality factor; radial bulk-mode resonance; radial bulk-mode vibrations; resonators; top-down front-end CMOS process; transducer; Dielectrics; Logic gates; Nanobioscience; Optical resonators; Piezoresistance; Resonant frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on

Conference_Location

Paris

ISSN

1084-6999

Print_ISBN

978-1-4673-0324-8

Type

conf

DOI

10.1109/MEMSYS.2012.6170423

Filename

6170423