• DocumentCode
    1570430
  • Title

    A 70nm 16Gb 16-level-cell NAND Flash Memory

  • Author

    Shibata, Noboru ; Maejima, Hiroshi ; Isobe, Katsuaki ; Iwasa, Kiyoaki ; Nakagawa, Michio ; Fujiu, Masaki ; Shimizu, Takahiro ; Honma, Mitsuaki ; Hoshi, Satoru ; Kawaai, Toshimasa ; Kanebako, Kazunori ; Yoshikawa, Susumu ; Tabata, Hideyuki ; Inoue, Atsushi

  • Author_Institution
    Toshiba Corp. Semicond. Co., Kanagawa
  • fYear
    2007
  • Firstpage
    190
  • Lastpage
    191
  • Abstract
    A 16 Gb 16-level-cell (16LC) NAND flash memory using 70 nm design rule has been developed. This 16LC NAND flash memory can store 4 bits in a cell which enabled double bit density comparing to 4-level-cell (4LC) NAND flash with the same design rule. New programming method achieves 0.62 MB/s programming throughput.
  • Keywords
    NAND circuits; flash memories; 16-level-cell NAND flash memory; 4-level-cell NAND flash memory; size 70 nm; storage capacity 16 Gbit; storage capacity 4 bit; CMOS technology; Circuits; Costs; Error correction codes; Latches; Nonvolatile memory; Silicon; Size control; Threshold voltage; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2007 IEEE Symposium on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-900784-05-5
  • Electronic_ISBN
    978-4-900784-05-5
  • Type

    conf

  • DOI
    10.1109/VLSIC.2007.4342710
  • Filename
    4342710
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1570430