DocumentCode
1570465
Title
Quantum structures for infrared imaging
Author
Gunapala, S.D. ; Bandara, S.V. ; Hill, C.J. ; Ting, D.Z. ; Mumolo, J.M. ; Liu, J.K. ; Keo, S.A. ; Soibel, A.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fYear
2008
Firstpage
358
Lastpage
359
Abstract
We have used quantum wells, quantum dots, and strained layer sperlattices for infrared detection and imaging. Quantum well infrared photodetectors (QWIPs) are based on GaAs/AlGaAs material system and the quantum dot infrared detector (QDIPs) are based on InAs/InGaAs/GaAs materials system. Strained layer superlattice (SLS) detectors are based on InAs/GaSb materials system and grown on GaSb substrates.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; infrared imaging; quantum optics; semiconductor quantum dots; semiconductor quantum wells; semiconductor superlattices; GaAs-AlGaAs; GaSb; infrared imaging; quantum dots; quantum structures; quantum wells; strained layer superlattices; Cameras; Gallium arsenide; Infrared detectors; Infrared imaging; Laser sintering; Molecular beam epitaxial growth; Optical imaging; Pixel; Quantum dots; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688638
Filename
4688638
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