DocumentCode
1570483
Title
Effect of different oxidation methods on microstructures and properties of AlO/sub x/ in magnetic tunnel junction
Author
Jun Soo Bae ; Kyung Ho Shin ; Hyuck Mo Lee
Author_Institution
Korea Advanced Institute of Science and Technology
fYear
2002
Firstpage
334
Lastpage
334
Abstract
Summary form only given. The AlOx tunnel barrier is a critical and sensitive layer in magnetic tunnel junctions (MTJ). The natural oxidation and the plasma oxidation methods are generally employed to fabricate this layer. In this study, the microstructures and properties of the AlOx layer formed by both methods were compared.
Keywords
Artificial intelligence; Magnetic films; Magnetic properties; Magnetic tunneling; Materials science and technology; Microstructure; Oxidation; Plasma density; Plasma x-ray sources; Reflectivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
0-7803-7365-0
Type
conf
DOI
10.1109/INTMAG.2002.1001177
Filename
1001177
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