Reduction in dark current using resonant tunneling barrier in dots-in-a-well long wavelength infrared photodetectors

Author

Barve, A.V. ; Shah, S.Y. ; Shao, J. ; Vandervelde, Thomas E. ; Shenoi, R. ; Jang, W.-Y. ; Krishna, S.

Author_Institution

Dept of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM

fYear

2008

Firstpage

360

Lastpage

361

Abstract

Reduction of dark current in DWELL photodetectors using resonant tunneling barriers is presented. At 77 K, the dark current is reduced by a factor of 1000 in positive bias. The peak detectivity is 4 times 10⁹ cm.Hz^1/2 W^-1 (V_b= -1.1 V, 77 K at lambda_peak = 11 mum).

Keywords

infrared detectors; photodetectors; resonant tunnelling; DWELL photodetectors; dark current reduction; dots-in-a-well long wavelength infrared photodetectors; resonant tunneling barrier; temperature 77 K; voltage -1.1 V; wavelength 11 mum; Carrier confinement; Dark current; Electrons; Gallium arsenide; Infrared detectors; Photodetectors; Physics; Quantum dots; Resonant tunneling devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the

Conference_Location

Acapulco

Print_ISBN

978-1-4244-1931-9

Electronic_ISBN

978-1-4244-1932-6

Type

conf

DOI

10.1109/LEOS.2008.4688639

Filename

4688639

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1570485