Title :
Effects of disorder in magnetic tunnel junctions
Author :
Yun Li ; Ching-Ray Chang
Author_Institution :
Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary form only given. The influences of barrier random disorder on tunnel conductance (TC) and magnetoresistance (TMR) in ferromagnet (FM)/insulator(semiconductor) (I(S))/FM junctions are investigated theoretically taking into account spin-orbit (SO) coupling. The TMR decreases significantly due to the spin-flip (SF) scattering caused by the SO coupling. We have found that the SF scattering is much stronger for antiparallel configuration of magnetization due to the reversal of the spin dependence of the final DOS in the spin-flip processes and the TMR can even be inversed when the SF scattering is beyond some critical point. The numerical calculations are performed within the single-orbital tight-binding model using the recursive Green´s function method based on the extended Landauer-Buttiker formula.
Keywords :
Green´s function methods; MIM structures; magnetic multilayers; metal-semiconductor-metal structures; recursion method; spin-orbit interactions; tight-binding calculations; tunnelling magnetoresistance; antiparallel magnetization configuration; barrier random disorder effects; extended Landauer-Buttiker formula; ferromagnet/insulator/ferromagnet junctions; ferromagnet/semiconductor/ferromagnet junctions; magnetic tunnel junctions; numerical calculations; recursive Green´s function method; single-orbital tight-binding model; spin-flip scattering; spin-orbit coupling; tunnel conductance; tunnel magnetoresistance; Couplings; Electrons; Impurities; Insulation; Magnetic tunneling; Physics; Plasma temperature; Scattering; Temperature dependence; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001180
