Title :
Transport in magnetically-doped magnetic tunnel junctions
Author :
Seung-Young Bae ; Shan Xiang Wang
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
Abstract :
Summary form only given. We report striking transport features in high quality magnetic tunnel junctions (TMR /spl ges/ 40 % at room temperature). These features are presumed to be associated with well-localized magnetic impurities (Co/sup +2/) inside the tunnel barriers, which diffuse out from the bottom CoFe electrode during the high power plasma oxidation of the tunnel barriers.
Keywords :
MIM structures; cobalt alloys; exchange interactions (electron); iron alloys; magnetic impurities; magnetic multilayers; oxidation; tunnelling magnetoresistance; Applebaum theory; Co/sup +2/ well-localized magnetic impurities; CoFe; CoFe bottom electrode; TMR suppression; correlated electron transport; dynamic conductance anomalies; high power plasma oxidation; magnetically-doped magnetic tunnel junctions; s-d exchange interaction; spin-flip scattering; temperature dependence; tunnel barrier impurities; Electrodes; Electrons; Impurities; Magnetic tunneling; Materials science and technology; Oxidation; Plasma temperature; Plasma transport processes; Scattering; Temperature dependence;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001181
