Title :
Ultra low voltage and high speed CMOS carry generate circuits
Author :
Berg, Y. ; Mirmotahari, O.
Author_Institution :
Dept. of Inf., Univ. of Oslo, Oslo, Norway
Abstract :
In this paper we present different ultra low-voltage CMOS carry generate circuits. The circuits may operate at supply voltages below the inherent threshold voltage of the transistors while maintaining a current level of transistors operating in strong inversion. The circuits show an improved performance compared to complementary CMOS in terms of delay. Preliminary results indicate a reduced delay to approximately 1/10 of a complementary CMOS design. Simulated data for a ST 90 nm CMOS process are included.
Keywords :
CMOS logic circuits; carry logic; high-speed integrated circuits; logic gates; low-power electronics; CMOS carry generate circuits; CMOS design; high speed circuits; semifloating-gate inverter; size 90 nm; ultra low voltage circuits; CMOS logic circuits; CMOS process; Capacitance; Delay; Energy consumption; Inverters; Logic circuits; Low voltage; MOSFETs; Threshold voltage;
Conference_Titel :
Circuit Theory and Design, 2009. ECCTD 2009. European Conference on
Conference_Location :
Antalya
Print_ISBN :
978-1-4244-3896-9
Electronic_ISBN :
978-1-4244-3896-9
DOI :
10.1109/ECCTD.2009.5274990
