Effects of CoFe surface oxidation on tunneling magnetoresistance

Summary form only given. TMR is being investigated for its possible applications in magnetic sensors and memories. One of the key processes in TMR junctions is the fabrication of the tunneling barrier. The oxidation status of Al and the ferromagnet at the ferromagnet/Al interface is very important in determining the MR ratio, junction resistance, and magnetic properties. Also, the surface state of the ferromagnet affects the growth mode of Al, which affects the resistance uniformity. The authors report the effects of surface oxidation of CoFe prior to Al deposition on the MR ratio, RA (resistance/spl times/area product), and wafer uniformity.