DocumentCode
1570649
Title
Analysis of a novel BAW-based power amplifier
Author
Contaldo, Matteo ; Enz, Christian C.
Author_Institution
Swiss Center for Electron. & Microtechnol. (CSEM), Neuchatel, Switzerland
fYear
2009
Firstpage
375
Lastpage
378
Abstract
A novel MEMS-based co-designed power amplifier is presented. To introduce the analysis and evaluate the impact of realistic on-chip losses, two design approaches are discussed and compared. Then the study of the novel circuit, based on the integration of high-Q BAW resonators with a Class E PA, is described. The integration method is explained, demonstrating how a careful co-design can allow to reach optimum performances. To confirm the theory a design example in a standard 0.18 mum CMOS technology is provided, showing an output power of 14.7 dBm and a drain efficiency up to 56% at 2.44 GHz.
Keywords
CMOS integrated circuits; Q-factor; acoustic resonators; bulk acoustic wave devices; micromechanical resonators; power amplifiers; CMOS technology; Class E power amplifier; MEMS-based co-designed power amplifier; frequency 2.44 GHz; high-Q BAW resonators; on-chip loss; size 0.18 mum; CMOS technology; Circuits; Design optimization; Inductors; Power amplifiers; Power generation; Q factor; Switches; Transmitters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuit Theory and Design, 2009. ECCTD 2009. European Conference on
Conference_Location
Antalya
Print_ISBN
978-1-4244-3896-9
Electronic_ISBN
978-1-4244-3896-9
Type
conf
DOI
10.1109/ECCTD.2009.5274992
Filename
5274992
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