Title :
Simple solutions for modelling the non-uniform substrate doping
Author :
Lallement, Christophe ; Enz, Christian ; Bucher, Matthias
Author_Institution :
Swiss Federal Inst. of Technol., Lausanne, Switzerland
Abstract :
Present-day CMOS processes use ion implantation to adjust the threshold voltages and to avoid the punch through effect. The substrate doping in the transistor can thus no longer be considered as uniform, and accurate modelling of this effect is required for precise analog circuit simulation. Two new solutions taking this effect into account are proposed and compared with other existing approaches. The results of these new models are compared with 2-D device simulations and measurements of a 2 μm CMOS low voltage process
Keywords :
CMOS integrated circuits; circuit analysis computing; doping profiles; ion implantation; semiconductor process modelling; 2 mum; 2D device simulations; Arora doping transformation model; CMOS low voltage process; EKV model; MASTAR model; analog circuit simulation; ion implantation; nonuniform substrate doping modelling; punch through effect avoidance; step model; threshold voltage adjustment; Analog circuits; CMOS process; CMOS technology; Circuit simulation; Doping; Ion implantation; Laboratories; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3073-0
DOI :
10.1109/ISCAS.1996.541995
