Magnetoresistance in exchange-biased IrMn/NiFe/FeMn

Author

Guo, Z.B. ; Qiu, J.J. ; Zheng, Y.K. ; Han, G.C. ; Li, K.B. ; Luo, P. ; Wu, Y.H.

Author_Institution

Data Storage Inst., Nat. Univ. of Singapore, Singapore

fYear

2002

Abstract

Summary form only given. Over the past few years, the influence of magnetic domain walls on transport properties has attracted great interest. In this paper, we fabricated a series of samples of IrMn(20nm)/NiFe(t nm)/FeMn(20nm) with t = 5, 10, 20, 50, and 80nm. The films were deposited under a magnetic field of 100Oe and then annealed at 250/spl deg/C to induce the exchange bias of IrMn/NiFe and NiFe/FeMn parallel to each other. After that, the samples were annealed at 155/spl deg/C under a reversed magnetic field of -1 Tesla, which reversed the exchange bias direction of NiFe/FeMn resulting in the exchange bias of NiFe/FeMn antiparallel to that of IrMn/NiFe.

Keywords

Permalloy; coercive force; exchange interactions (electron); iridium alloys; magnetic domain walls; magnetic multilayers; magnetoresistance; manganese alloys; 155 degC; 250 degC; 5 to 80 nm; IrMn-NiFe-FeMn; coercivity; exchange bias; films; magnetic domain walls; magnetization; magnetoresistance; Anisotropic magnetoresistance; Annealing; Conductivity; Electrical resistance measurement; Extraterrestrial measurements; Magnetic domain walls; Magnetic field measurement; Magnetic fields; Magnetization; Magnetostriction;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1001196

Filename

1001196