Title :
Travelling wave simulation of diode charge storage effect
Author :
Chang, Fung-Yuel ; Pun, Kong-Pang
Author_Institution :
Chinese Univ. of Hong Kong, Shatin, Hong Kong
Abstract :
Linvill´s (1958) physical diode model has been generalized to include the travelling wave component of the dynamic Poisson´s equation left out in the classical formulation of semiconductor device equations. The generalized physical diode model contains three lumped circuit approximations of the P-line, N-line, and the potential-line for simulating respectively, the hole and electron diffusion and recombination processes and the time-varying electrostatic potential inside the diode. All model elements are basic circuit elements defined in SPICE-like circuit simulators. The diode recovery phenomenon is simulated using the generalized physical diode model and the simulation accuracy had been verified by using a mixed-level circuit and device simulator
Keywords :
carrier mobility; charge storage diodes; electric potential; electron-hole recombination; equivalent circuits; lumped parameter networks; semiconductor device models; semiconductor diodes; Linvill physical diode model; N-line; P-line; SPICE-like circuit simulators; diode charge storage effect; diode recovery phenomenon; dynamic Poisson equation; electron diffusion; hole diffusion; lumped circuit approximations; mixed-level circuit/device simulator; p-n junction diode; potential-line; recombination processes; semiconductor device equations; time-varying electrostatic potential; travelling wave simulation; Capacitance; Charge carrier processes; Circuit simulation; Conductors; Diodes; Electrostatics; Maxwell equations; Poisson equations; Spontaneous emission; Voltage;
Conference_Titel :
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3073-0
DOI :
10.1109/ISCAS.1996.541997
