High-power 1.55μm VECSEL for mode-locked pulse generation with an InGaAsN/GaAsN fast saturable absorber mirror

Author

Khadour, A. ; Bouchoule, S. ; Tourrenc, J.P. ; Decobert, J. ; Provost, J.G. ; Miard, A. ; Harmand, J.C. ; Oudar, J.L.

Author_Institution

Lab. de Photonique et de Nanostruct. (LPN), CNRS, Marcoussis

fYear

2008

Firstpage

402

Lastpage

403

Abstract

A 1.55 mum VECSEL with a metal-GaAs/AlAs hybrid metamorphic mirror optimized for high power operation has been assembled with a fast saturable absorber mirror (SESAM) in a four mirror cavity to generate mode-locked pulses with an RF linewidth < 20 kHz at a frequency of 2 GHz.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser mode locking; optical pulse generation; optical saturable absorption; spectral line breadth; surface emitting lasers; GaAs-AlAs; VECSEL; fast saturable absorber mirror; four mirror cavity; frequency 2 GHz; high power operation; metal-GaAs-AlAs hybrid mirror; metamorphic mirror; mode-locked pulse generation; radiofrequency linewidth; wavelength 1.55 mum; Gallium arsenide; Mirrors; Optical pulse generation; Optical pumping; Optical saturation; Optical surface waves; Power generation; Pulse generation; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the

Conference_Location

Acapulco

Print_ISBN

978-1-4244-1931-9

Electronic_ISBN

978-1-4244-1932-6

Type

conf

DOI

10.1109/LEOS.2008.4688660

Filename

4688660