Title :
Magnetization reversal of deep submicron magnetic elements
Author :
Tezuka, Nobuki ; Kitagawa, Eiji ; Inomata, K. ; Sugimoto, Satoshi
Author_Institution :
Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan
Abstract :
Summary form only given. Magnetic films patterned into deep submicron scale are of great interest with future high density storage and memory devices. These applications require the magnetic behavior, especially switching field, of submicron elements to be well defined. We have calculated the switching field behavior and remanent magnetization configuration for single films and synthetic antiferromagnets (ferromagnet/nonmagnet/ferromagnet:SyAF). In this work, experimental study was carried out using Ni/sub 80/Fe/sub 20/ films. We will present these results in conjunction with the results of the micromagnetic simulation and demonstrate the advantage of the SyAF.
Keywords :
ferromagnetic materials; iron alloys; magnetic switching; magnetic thin films; magnetisation reversal; metallic thin films; micromagnetics; nickel alloys; remanence; Ni/sub 80/Fe/sub 20/; Ni/sub 80/Fe/sub 20/ films; deep submicron magnetic elements; magnetic films; magnetic switching field; magnetization reversal; micromagnetic simulation; remanent magnetization; synthetic antiferromagnets; Magnetic anisotropy; Magnetic films; Magnetic force microscopy; Magnetic hysteresis; Magnetic materials; Magnetic switching; Magnetization reversal; Material storage; Perpendicular magnetic anisotropy; Scanning electron microscopy;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001209
