Title :
18Gb/s Optical IO: VCSEL Driver and TIA in 90nm CMOS
Author :
Kern, Alexandra ; Chandrakasan, Anantha ; Young, Ian
Author_Institution :
Massachusetts Inst. of Technol., Cambridge
Abstract :
An 18 Gb/s optical data rate is achieved with a commercial GaAs VCSEL by applying rising and falling edge pre-emphasis with a 90 nm CMOS driver. The pre-emphasis pulse shape can be digitally adjusted with time resolution less than one bit period. The TIA receiver has cross-coupled cascodes to increase the amplifier gain/bandwidth and operates at 12.5 Gb/s to 18 Gb/s depending on the input capacitance.
Keywords :
CMOS integrated circuits; driver circuits; optical interconnections; semiconductor lasers; surface emitting lasers; CMOS driver; TIA; VCSEL driver; bit rate 18 Gbit/s; cross-coupled cascodes; optical IO; size 90 nm; Bandwidth; Driver circuits; Gallium arsenide; Optical amplifiers; Optical pulse shaping; Optical receivers; Pulse amplifiers; Shape; Stimulated emission; Vertical cavity surface emitting lasers;
Conference_Titel :
VLSI Circuits, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-05-5
Electronic_ISBN :
978-4-900784-05-5
DOI :
10.1109/VLSIC.2007.4342749
