Title :
Annealing effects on the physical properties of thermally evaporated Sn2Sb2S5 thin films
Author :
Fadhli, Y. ; Rabhi, A. ; Kanzari, M.
Author_Institution :
Lab. de Photovoltaiques et Mater. de Semicond. ENIT, Univ. de Tunis el Manar, Tunis, Tunisia
Abstract :
Sn2Sb2S5 thin films were elaborated by vacuum thermal evaporation and annealed at different temperatures during lh in air atmosphere. XRD data analysis shows that annealed films crystallize in the orthorhombic structure according to a preferential direction (602). The optical properties of thin films were determined from the analysis of the experimental recorded transmittance and reflectance data over the wavelength range 300-1800 nm. High absorption coefficients in the range 105-106 cm-1 were reached in the energy range 2-3.25 eV and two optical direct transitions were found. The layers annealed at temperatures greater than 150°C undergo abrupt changes in their electrical properties and exhibit a resistive hysteresis behavior. These properties confer to the material interest perspectives for its application in diverse advanced technologies such as photovoltaic applications and optical storage.
Keywords :
X-ray diffraction; annealing; antimony compounds; metallic thin films; tin compounds; vacuum deposition; Sn2Sb2S5 thin films; Sn2Sb2S5; XRD data analysis; absorption coefficients; annealed films; electron volt energy 2 eV to 3.25 eV; experimental recorded transmittance; optical direct transitions; optical storage; orthorhombic structure; photovoltaic applications; preferential direction; reflectance data; resistive hysteresis behavior; vacuum thermal evaporation; wavelength 300 nm to 1800 nm; Absorption; Annealing; Optical films; Optical reflection; Photonics; Temperature; Sn2Sb2S5; air annealing; hysteresis; thermal evaporation; thin films;
Conference_Titel :
Green Energy, 2014 International Conference on
Conference_Location :
Sfax
Print_ISBN :
978-1-4799-3601-4
DOI :
10.1109/ICGE.2014.6835409