DocumentCode :
157124
Title :
An optical arrangement for boosting the efficiency of a system containing a GaAs solar cell
Author :
Mokri, Alaeddine ; Emziane, Mahieddine
Author_Institution :
Solar Energy Mater. & Devices Lab., Masdar Inst. of Sci. & Technol., Abu Dhabi, United Arab Emirates
fYear :
2014
fDate :
25-27 March 2014
Firstpage :
129
Lastpage :
133
Abstract :
GaAs solar cells exceed 28% efficiency under no light concentration, and this is partly due to their near-optimum bandgap of 142 eV. Also, the electrical and optical properties of GaAs enable efficient generation and collection of free carries excited by photons with wavelengths below 870 nm. However, this part of the spectrum represents less than 40% of the total solar spectrum, and the remaining 60% is not utilized. The purpose of this research is to convert this part of the spectrum to enhance the efficiency of the GaAs cell. This is achieved by proposing an optical arrangement that splits the solar spectrum at the wavelength 870 nm, and direct the normally not utilized part of the spectrum towards a single-junction thermophotovoltaic cell. Several medium and low energy bandgap materials are considered, and based on their I-V parameters, the optimal configuration of the proposed optical design is decided. Around 40% improvement in efficiency has been achieved by combining the GaAs cell with an InGaAs cell in the proposed optical arrangement.
Keywords :
III-V semiconductors; electric properties; gallium arsenide; indium compounds; optical properties; solar cells; solar spectra; thermophotovoltaic cells; GaAs; InGaAs; bandgap materials; electrical properties; electron volt energy 1.42 eV; near-optimum bandgap; no light concentration; optical arrangement; optical design; optical properties; single-junction thermophotovoltaic cell; solar cell; solar spectrum; wavelength 870 nm; Gallium arsenide; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Receivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Green Energy, 2014 International Conference on
Conference_Location :
Sfax
Print_ISBN :
978-1-4799-3601-4
Type :
conf
DOI :
10.1109/ICGE.2014.6835410
Filename :
6835410
Link To Document :
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