High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching

The self-assembly method of forming QDs, although well established as a reliable growth technique, does not allow explicit control over the size and position of each QD. The large size variation of these QDs typically results in significant inhomogeneous broadening, diminishing the potential advantages of their use in optoelectronic devices such as low threshold current density, narrow gain bandwidth, and increased characteristic temperature [1]. Furthermore, the ability to control both the position and spectral properties of a single QD is of great importance for the next generation of nanophotonic devices integrating photonic crystal nanocavities with single QD emitters, which have potential applications in quantum optics and cavity quantum electrodynamics.