• DocumentCode
    1571294
  • Title

    Photoluminescence study of InGaN site-controlled nanostructures formed by selective area epitaxy

  • Author

    Lee, L.K. ; Jung, T. ; Ku, P.C.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
  • fYear
    2008
  • Firstpage
    433
  • Lastpage
    434
  • Abstract
    We studied photoluminescence of InGaN site-controlled nanostructures formed by selective area epitaxy. We developed a theoretical model for the nanoscale growth evolution and used this model for the optimization of optical qualities of InGaN nanostructures.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; nanostructured materials; optical materials; photoluminescence; semiconductor growth; wide band gap semiconductors; InGaN; InGaN site-controlled nanostructures; photoluminescence; selective area epitaxy; Computational modeling; Epitaxial growth; Gallium nitride; MOCVD; Nanostructures; Optical control; Optical films; Photoluminescence; Plasma temperature; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688676
  • Filename
    4688676
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1571294