DocumentCode
1571499
Title
Maximally confined silicon microphotonic modulators and switches
Author
Watts, Michael R. ; Trotter, Douglas C. ; Young, Ralph W. ; Lentine, Anthony L.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM
fYear
2008
Firstpage
457
Lastpage
458
Abstract
We demonstrate a 4 mum silicon microdisk modulator with a reverse-biased, vertical p-n junction. The modulator demonstrates a power consumption of 85 fJ/bit at a data rate of 10 Gb/s, 3.5 V drive, BER<10-12, and without signal pre-emphasis. High-speed silicon bandpass switches are constructed from pairs of modulators.
Keywords
elemental semiconductors; error statistics; integrated optics; micro-optics; optical communication equipment; optical links; optical modulation; optical switches; p-n junctions; power consumption; silicon; Si; bit rate 10 Gbit/s; bit-error-rate; high-speed silicon bandpass switches; optical communication links; power consumption; reversed-biased vertical p-n junction; silicon microdisk modulator; silicon microphotonics; size 4 mum; voltage 3.5 V; Bit error rate; Energy consumption; Optical modulation; Optical resonators; Optical signal processing; P-n junctions; Power measurement; Silicon; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location
Acapulco
Print_ISBN
978-1-4244-1931-9
Electronic_ISBN
978-1-4244-1932-6
Type
conf
DOI
10.1109/LEOS.2008.4688688
Filename
4688688
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