Analysis of GMR profiles in dual spin-valve structure using triple domain model

Author

Dong Young Kim ; Kim, C.G. ; Lee, S.S. ; Hwang, Do Guwn ; Lee, Jung Keun

Author_Institution

1SE Lab., Hyundai Syscomm. Co. Ltd., Kyoungki, South Korea

fYear

2002

Abstract

Summary form only given. The change in resistivity due to the dual spin-valve effect (DSV) arises from the relative angle between the magnetization directions of the two pinned layers and a free layer. The enhanced GMR ratio has been explained in terms of the specular scattering of conduction electron at the metal/insulator interface of top and bottom surfaces. In this work, the GMR profiles were measured in a sample of NiO/NiFeCo/Cu/NiFeCo/Cu/NiFeCo/NiO in the field range of -1 kOe to 1 kOe at an angle /spl theta/=0/spl deg/ and 90/spl deg/, respectively, where /spl theta/ is the angle from the direction of annealing field. The measured GMR profiles were compared with the calculation using the extended triple domain model.

Keywords

antiferromagnetic materials; cobalt alloys; copper; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic domains; magnetic multilayers; magnetisation; nickel alloys; nickel compounds; spin valves; GMR profiles; GMR ratio; NiO-NiFeCo-Cu-NiFeCo-Cu-NiFeCo-NiO; NiO/NiFeCo/Cu/NiFeCo/Cu/NiFeCo/NiO; annealing field; conduction electron; dual spin-valve effect; dual spin-valve structure; magnetization directions; metal/insulator interface; pinned layers; relative angle; resistivity; specular scattering; triple domain model; Current measurement; Damping; Electrical resistance measurement; Goniometers; Magnetic field measurement; Magnetic hysteresis; Magnetization; Physics; Temperature; Viscosity;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Conference_Location

Amsterdam, The Netherlands

Print_ISBN

0-7803-7365-0

Type

conf

DOI

10.1109/INTMAG.2002.1001239

Filename

1001239