• DocumentCode
    1571605
  • Title

    Effect of Power Supply Noise on SRAM Dynamic Stability

  • Author

    Khellah, Muhammad ; Khalil, DiaaEldin ; Somasekhar, Dinesh ; Ismail, Yehea ; Karnik, Tanay ; De, Vivek

  • Author_Institution
    Intel, Hillsboro
  • fYear
    2007
  • Firstpage
    76
  • Lastpage
    77
  • Abstract
    We present both simulation results and test-chip measurements on the effect of power supply noise on SRAM dynamic cell stability. Results indicate that to accurately capture the effect of supply droop on bit failure rate, not only the DC amplitude of the noise needs to be considered as commonly practiced, but also its phase and frequency.
  • Keywords
    SRAM chips; circuit noise; integrated circuit testing; power supply circuits; SRAM dynamic cell stability; bit failure rate; power supply noise effect; static random access memory; test-chip measurement; Circuit noise; Circuit simulation; Circuit stability; Circuit testing; Frequency; Noise level; Noise measurement; Phase noise; Power supplies; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2007 IEEE Symposium on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-900784-05-5
  • Electronic_ISBN
    978-4-900784-05-5
  • Type

    conf

  • DOI
    10.1109/VLSIC.2007.4342772
  • Filename
    4342772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1571605