DocumentCode :
1571710
Title :
Magnetic/semiconductor heterostructures for spintronic devices
Author :
De Boeck, J. ; Van Roy, W. ; Motsnyi, V.F. ; Liu, Z. ; Van Dorpe, P. ; Nijboer, M. ; Das, J. ; Goovaerts, E. ; Safarov, V.I. ; Borghs, G.
Author_Institution :
UIA, Univ. of Antwerp, Antwerpen, Belgium
fYear :
2002
Abstract :
Summary form only given. We discuss materials options to build spintronic devices illustrated by our recent experimental findings in fabricating NiMnSb epitaxial magnetic contacts, ferromagnetic/insulator/semiconductor (FM/I/S) spin-LED´s and (Al,Ga)MnAs-based heterostructures. We use all the bandgap engineering tricks of advanced semiconductor devices to exploit and enhance spin-dependent effects.
Keywords :
III-V semiconductors; aluminium compounds; antimony alloys; gallium arsenide; interface magnetism; magnetic semiconductors; magnetoelectronics; manganese alloys; manganese compounds; nickel alloys; AlGaMnAs-based heterostructures; bandgap engineering; epitaxial magnetic contacts; ferromagnetic/insulator/semiconductor spin-LED; magnetic/semiconductor heterostructures; spintronic devices; Iron; Magnetic devices; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetic separation; Magnetoelectronics; Optical polarization; Semiconductor devices; Spin polarized transport;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
Type :
conf
DOI :
10.1109/INTMAG.2002.1001246
Filename :
1001246
Link To Document :
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