Magnetic and electrical properties of Mn-doped GaN

Summary form only given. The rapid development of growth techniques for III-nitride semiconductors has resulted in the successful fabrication of GaN-based optical and electronic devices. In turn, GaN has created much interest recently as a candidate for material of spintronic devices owing to theoretical predictions that GaN-based diluted magnetic semiconductors (DMS) have high Curie temperature Tc exceeding room temperature (RT) (Dietl et al. (2000)). Very recently, we have succeeded in the growth of Mn-doped GaN films showing ferromagnetic behaviour at RT by ammonia-MBE. Here we report magnetic (magnetization) and electrical properties (Hall measurements) of Mn-doped GaN (GaN:Mn) films with a summary of crystallographic characteristics.