Self-organized quantum dot lasers monolithically grown on silicon

Author

Bhattacharya, Pallab ; Yang, Jun ; Mi, Zetian

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI

fYear

2008

Firstpage

531

Lastpage

532

Abstract

Monolithic optoelectronic integrated circuits on CMOS chips are envisioned for realizing future high speed systems. Some of the key technologies that are required include electrically injected, low threshold and highly reliable lasers and the monolithic integration of lasers, waveguides and modulators on Si with Si-based electronic devices in a CMOS-compatible process.

Keywords

CMOS integrated circuits; III-V semiconductors; indium compounds; integrated optoelectronics; optical modulation; optical waveguides; quantum dot lasers; silicon; CMOS chips; InGaAs; Si; monolithic optoelectronic integrated circuits; monolithically grown quantum dot laser; optical modulators; optical waveguide; self-organized quantum dot lasers; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Monolithic integrated circuits; Power lasers; Quantum dot lasers; Silicon; Temperature; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the

Conference_Location

Acapulco

Print_ISBN

978-1-4244-1931-9

Electronic_ISBN

978-1-4244-1932-6

Type

conf

DOI

10.1109/LEOS.2008.4688726

Filename

4688726

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1572316