Title :
Large cavity single layer quantum dot laser diodes
Author :
Shavitranuruk, K. ; Kim, J. ; Freisem, S. ; Ozgur, G. ; Chen, H. ; Deppe, D.G. ; Ardey, A. ; Delfyett, P.
Author_Institution :
Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL
Abstract :
Large cavity, very low threshold single layer quantum dot laser diodes with threshold current density of 10 A/cm2, output power > 2 W, and very-low internal loss of 0.25 cm-1 are achieved at CW room-temperature. Mode-locked operation of a large cavity laser diode with 40 mum stripe width is demonstrated at 3.75 GHz repetition rate.
Keywords :
III-V semiconductors; current density; indium compounds; laser mode locking; quantum dot lasers; InAs-GaAs; frequency 3.75 GHz; large cavity single layer quantum dot laser diodes; mode-locked operation; threshold current density; Diode lasers; Educational institutions; Laser mode locking; Optical losses; Photonics; Power generation; Quantum dot lasers; Quantum well lasers; Temperature; Threshold current;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688727
