• DocumentCode
    1572347
  • Title

    Stable above-threshold linewidth enhancement factor in a 1.52-μm InAs/InP (311B) quantum dot laser

  • Author

    Grillot, F. ; Martinez, A. ; Merghem, K. ; Provost, J.G. ; Alexandre, F. ; Piron, R. ; Dehaese, O. ; Loualiche, S. ; Lester, L.F. ; Ramdane, A.

  • fYear
    2008
  • Firstpage
    535
  • Lastpage
    536
  • Abstract
    The alphaH-factor behavior with current is investigated in a 1.52 mum InAs/InP (311B) QD laser. It is shown that due to low gain compression effects, no divergence of the alphaH-factor occurs unlike 1.3 mum InAs/GaAs QD lasers.
  • Keywords
    III-V semiconductors; indium compounds; quantum dot lasers; InAs-InP; above-threshold linewidth enhancement factor; gain compression effects; quantum dot laser; wavelength 1.52 mum; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Laser feedback; Laser stability; Optical materials; Optical waveguides; Quantum dot lasers; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688728
  • Filename
    4688728
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1572347