• DocumentCode
    1572392
  • Title

    High frequency permeability of CoFeV thin films deposited on thin flexible substrates

  • Author

    Valls, O. ; Damiani, D. ; Acher, O.

  • Author_Institution
    CEA/Le Ripault, LMMH, Monts, France
  • fYear
    2002
  • Abstract
    Summary form only given. A growing interest is dedicated to ferromagnetic thin films with high permeability levels up to several GHz. The development of inductors integrated on Si with high Q factor requires thin films with significant permeability levels and very small losses up to GHz frequencies. On the other hand, the development of integrated radio frequency shielding requires materials with high losses, preferably under a suitable form to make flexible Electro-Magnetic Interference suppressors. CoFeV thin films have been sputtered on 7.5/spl mu/m thick kapton sheets using DC magnetron sputtering onto continuously transported flexible medium. The permeability has been measured from 100 MHz up to 18 GHz. The permeability shows that the material exhibits high losses over a very large frequency band. As the material exhibits some coercivity, it has been established that the microwave response of saturated and unsaturated material differ.
  • Keywords
    cobalt alloys; coercive force; ferromagnetic materials; high-frequency effects; iron alloys; magnetic permeability; magnetic thin films; sputtered coatings; vanadium alloys; 100 MHz to 18 GHz; 7.5 micron; CoFeV; CoFeV thin films; DC magnetron sputtering; Si; coercivity; ferromagnetic thin films; high Q factor; high frequency permeability; integrated radio frequency shielding; microwave response; thin flexible substrates; Interference suppression; Magnetic materials; Permeability; Q factor; Radio frequency; Semiconductor thin films; Sheet materials; Sputtering; Thin film inductors; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
  • Conference_Location
    Amsterdam, The Netherlands
  • Print_ISBN
    0-7803-7365-0
  • Type

    conf

  • DOI
    10.1109/INTMAG.2002.1001279
  • Filename
    1001279