Title :
Emission characteristics of InGaAs/GaAs quantum dot microtube ring resonators
Author :
Sahmuganathan, V. ; Mi, Z. ; Drouin, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC
Abstract :
In this paper, we have performed a detailed investigation of the cathodoluminescence characteristics of InGaAs/GaAs QD microtube ring resonators fabricated by a single-step lithography process. We have unambiguously demonstrated that self-organized QD layers embedded in rolled-up microtube structures can exhibit significantly improved luminescence efficiency, compared to the as-grown layers. In addition, we have observed, for the first time, optical modes in rolled-up microtubes with an average wall thickness of 75 nm that is significantly smaller than the light wavelength (~ 1.0 mum). The results agree well with detailed analysis using finite-difference time-domain methods.
Keywords :
III-V semiconductors; cathodoluminescence; finite difference time-domain analysis; gallium arsenide; indium compounds; resonators; semiconductor quantum dots; InGaAs-GaAs; as-grown layers; cathodoluminescence characteristics; emission characteristics; finite-difference time-domain methods; luminescence efficiency; optical modes; quantum dot microtube ring resonators; rolled-up microtube structures; self-organized QD layers; single-step lithography process; Etching; Gallium arsenide; Indium gallium arsenide; Optical buffering; Optical films; Optical pumping; Optical ring resonators; Q factor; Quantum dots; Resonance;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688737
